ioducts., line. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistors 2n5490 2N5492 2n5494 2n5496 description ?with to-220 package ?high power dissipation applications ?for used in medium power and amplifier applications pinning pin 1 2 3 description base collector;connected to mounting base emitter 9 i.i i. 123 fig.1 simplified outline (to-220q 2N5492 2n5496 2n5490/5494 2N5492 2n5496 emitter-base voltage collector current base current total power dissipation junction temperature storage temperature conditions open emitter open base open collector tc=25l value 60 75 90 40 55 70 5 7 3 50 150 -65-150 unit v v v a a w - - symbol rth |-c parameter thermal resistance from junction to case *max 2.5 unit a/v
silicon npn power transistors 2n5490 2N5492 2n5494 2n5496 characteristics tj=25d unless otherwise specified symbol vceo(sus) vcesat vbe icev icer iebo hfe fr parameter collector-emitter sustioning voltage collector-emitter saturation voltage collector cut-off current 2n5490/5494 2N5492 2n5496 2n5490 2N5492 2n5494 2n5496 2n5490 2N5492 2n5494 2n5496 2N5492 2n5490/5494 2n5496 collector cut-off current emitter cut-off current 2n5490 2N5492 2n5494 2n5496 transition frequency conditions ic=0.1a;ib=0 ig=2.0a;ib=0.2a lc=2.5a;lb=0.25a ic=3.0a;ib=0.3a lc=3.5a;lb=0.35a lc=2.0a ; vce=4v ic=2.5a ; vce=4v lc=3.0a ; vce=4v lc=3.5a ; vce=4v vce=70v;vbe=1.5v vce=55v;vbe=1 .5v vce=85v;vbe=1.5v vce=rated vceo;ree=100n veb=5v; lc=0 lc=2.0a ; vce=4v ic=2.5a ; vce=4v lc=3.0a ; vce=4v ic=3.5a ; vce=4v lc=0.5a ; vce=4v min 40 55 70 20 0.8 typ. max 1.0 1.1 1.3 1.5 1.7 1.0 0.5 1.0 100 unit v v v ma ma ma mhz
silicon npn power transistors 2n5490 2N5492 2n5494 2n5496 package outline 1 d. 01) 8.76 0 00 832 15 3v 0,45 1.20 5.(jo" j u hb 2.60 fig.2 outline dimensionsfunindicated tolerance:0.10 mm)
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